X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1987-03-17
1988-11-29
Fields, Carolyn E.
X-ray or gamma ray systems or devices
Specific application
Lithography
378 84, 378145, G21K 500
Patent
active
047886986
ABSTRACT:
An X-ray exposure system including a plurality of X-ray exposure apparatuses each for duplicating a mask pattern on a semiconductor wafer by irradiating an X-ray mask and the semiconductor wafer with synchrotron radiation is disclosed in which a synchrotron radiation path branching device including a reflecting mirror is disposed between a synchrotron ring and the X-ray exposure apparatuses, and the propagation direction of the synchrotron radiation emitted from the synchrotron ring is changed by the reflecting mirror so that the synchrotron radiation from the ring can be introduced into each of the X-ray exposure apparatuses.
REFERENCES:
patent: 4028547 (1977-06-01), Eisenberger
patent: 4242588 (1980-12-01), Silk et al.
patent: 4514857 (1985-04-01), Kumura et al.
Bannenberg et al., "A 40-200 kV Ion Accelerator with Three Beam Lines", Nud. Instr. and Methods, 91 (2), 1971 pp. 269-276, 328/233.
E. Spiller et al., "Application of Synchrotron to X-ray Lithography", Journal of Applied Physics, vol. 47, No. 12, Dec. '76 378/34.
Asai Shojiro
Kimura Takeshi
Mochiji Kozo
Obayashi Hidehito
Fields Carolyn E.
Hitachi , Ltd.
Porta David P.
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