Writing method in DRAM

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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36523008, G11C 1300

Patent

active

049319957

ABSTRACT:
A data writing method in a DRAM comprises the steps of bringing a row address strobe input signal into an enabling state and successively changing a signal indicative of a row address while the row address strobe input signal is in the enabling state, thereby to write data successively into a plurality of memory cells designated by the row addresses.

REFERENCES:
patent: 4575825 (1986-03-01), Ozaki et al.
patent: 4596004 (1986-06-01), Kaufman
patent: 4685089 (1987-08-01), Patel
patent: 4764901 (1988-08-01), Sakurai
patent: 4811299 (1989-03-01), Miyazawa et al.
Minutes of JC-42.3.2 Dram Task Group Meeting held on Jun. 16-17, 1987 in San Diego.

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