Write-read drive arrangement for a bipolar semiconductor memory

Details Write-read drive arrangement for a bipolar semiconductor memory Write-read drive arrangement for a bipolar semiconductor memory

1978-08-31

1980-05-20

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

307238, G11C 1140

Patent

active

042042763

ABSTRACT:
A write-read drive arrangement for a bipolar semiconductor memory, arranged in the form of a matrix, and comprising a preliminary stage which can be driven by way of a right-end and data input, and which has two information outputs and a status output which is fed with operating state signals, and an intermediate and end stage which are connected following the preliminary stage and logically link a read-out amplifier to the bit lines of the individual storage cells and to the outputs of the preliminary stage is particularly characterized in that a circuit arrangement which connects the outputs of the preliminary stage to a first signal line and a second signal line of the end stage is provided as an intermediate stage and that each line of the storage matrix is assigned a maximum of one switching transistor which can be operated by way of the signal lines and logically links the bit lines to the inputs of the read-out amplifier.

REFERENCES:
"High Speed Bipolar Monolithic Memories", Hans Glock et al., Frequenz, 29 (1975), 3, pp. 80-87.

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