Write mode circuitry for photovoltaic ferroelectric memory cell

Details Write mode circuitry for photovoltaic ferroelectric memory cell Write mode circuitry for photovoltaic ferroelectric memory cell

1981-01-30

1982-11-23

Stellar, George G.

Static information storage and retrieval

Systems using particular element

Ferroelectric

G11C 1122

Patent

active

043608965

ABSTRACT:
Non-volatile semiconductor matrix random access and electrically alterable rogrammable read-only memories are disclosed. Each memory cell of the matrix memory includes a photovoltaic ferroelectric element which is remanently polarized with a write signal, and which when illuminated, produces a photovoltage which causes a field effect transistor to assume one of two states. Variable impedance means, for example, at least a diode or a breakdown diode is connected in each cell for providing a low impedance when the write gate pulse is applied to the photovoltaic ferroelectric element and for providing a high impedance when the photovoltage produced by the photovoltaic ferroelectric element is applied to the field effect transistor gate. If power to the memory is lost, by illuminating the photovoltaic ferroelectric element, the field effect transistor may be caused to assume the state which it was in before loss of power.

REFERENCES:
patent: 4144591 (1979-03-01), Brody

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