Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-03-15
2008-11-04
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S211000, C365S163000, C365S225700, C365S148000, C365S230060
Reexamination Certificate
active
07447092
ABSTRACT:
A programming method which controls the amount of a write current applied TO Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the phase change material (PCM) in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing or keeping the same a reset current and/or a set current.
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Cho Baek-Hyung
Cho Woo-Yeong
Choi Byung-Gil
Oh Hyung-Rok
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Tran Andrew Q
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