World line structure with single-sided partially recessed...

Details World line structure with single-sided partially recessed... World line structure with single-sided partially recessed...

2006-01-31

2006-01-31

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S218000, C257S396000

Reexamination Certificate

active

06991978

ABSTRACT:
A word line structure with a single-sided partially recessed gate structure. The word line structure includes a gate structure, a first gate spacer, and a second gate spacer. The gate structure includes a gate dielectric layer, a first gate layer, a second gate layer, and a gate capping layer and has a recess region adjacent to one of opposing sidewalls of the second gate layer. The first gate spacer is disposed over opposing sidewalls of the gate dielectric layer and the first gate layer. The second gate spacer is disposed over opposing sidewalls of the gate structure and covers the first gate spacer. A method for forming a word line structure with a single-sided partially recessed gate structure is also disclosed.

REFERENCES:
patent: 5591664 (1997-01-01), Wang et al.

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