Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-06
2007-11-06
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S198000, C438S199000, C438S217000, C438S218000, C438S585000, C438S587000, C438S588000, C438S647000, C438S652000, C438S287000, C257SE21370, C257SE21395, C257SE21399
Reexamination Certificate
active
11220451
ABSTRACT:
Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second and third metals, respectively, to move the work function of the first metal in opposite directions in the different regions. The resulting work functions in the different regions correspond to that of different types of the transistors that are to be formed.
REFERENCES:
patent: 6204103 (2001-03-01), Bai et al.
patent: 6265258 (2001-07-01), Liang et al.
patent: 6770521 (2004-08-01), Visokay et al.
patent: 2006/0134848 (2006-06-01), Lander et al.
patent: 2006/0134870 (2006-06-01), Luan et al.
patent: 2007/0037333 (2007-02-01), Colombo et al.
patent: 2007/0037335 (2007-02-01), Chambers et al.
Chambers James Joseph
Colombo Luigi
Pacheco Rotondaro Antonio Luis
Visokay Mark Robert
Ahmadi Mohsen
Brady III W. James
Garner Jacqueline J.
Lebentritt Michael
LandOfFree
Work function control of metals does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Work function control of metals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Work function control of metals will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3839006