Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1996-03-29
1997-09-30
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
365203, 36523006, 365226, G11C 700, G11C 800
Patent
active
056732252
ABSTRACT:
A word line voltage boosting circuit varies a word line output voltage according to variation of the number of the word lines to be activated. A boosting circuit boosts a word line voltage which has been precharged to a first level voltage to a second level voltage in response to an activation signal. A voltage adding circuit further boosts the word line voltage to a third voltage level by adding a predetermined voltage to the second level voltage if the number of the word lines to be activated increases. A driving circuit includes a bootstrap circuit for stably providing the boosted word line voltage to an output line.
REFERENCES:
patent: 4896297 (1990-01-01), Miyatake et al.
patent: 5184035 (1993-02-01), Sugibayashi
patent: 5246333 (1993-09-01), Maeda
patent: 5255224 (1993-10-01), Galbi et al.
patent: 5287325 (1994-02-01), Morita
patent: 5550775 (1996-08-01), Abe et al.
Jeong Woo-seop
Lee Ho-cheol
Nelms David C.
Phan Trong Quang
Samsung Electronics Co,. Ltd.
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