Word line strap layout structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S395000

Reexamination Certificate

active

06909131

ABSTRACT:
A word line strap layout structure is described, comprising an isolation post, a word line, a contact and a metal line. The isolation post is located on a substrate between two memory areas. The word line crosses over the substrate and the isolation post, and the contact is located on the word line over the isolation post, wherein the isolation post and the contact are of the same scale in size. The metal line is located over the substrate electrically connecting with the word line via the contact.

REFERENCES:
patent: 6121146 (2000-09-01), Yoon et al.
patent: 6563446 (2003-05-01), Sutardja
patent: 6664171 (2003-12-01), Gonzalez et al.
patent: 6680227 (2004-01-01), Kuo et al.

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