Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-21
2005-06-21
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S395000
Reexamination Certificate
active
06909131
ABSTRACT:
A word line strap layout structure is described, comprising an isolation post, a word line, a contact and a metal line. The isolation post is located on a substrate between two memory areas. The word line crosses over the substrate and the isolation post, and the contact is located on the word line over the isolation post, wherein the isolation post and the contact are of the same scale in size. The metal line is located over the substrate electrically connecting with the word line via the contact.
REFERENCES:
patent: 6121146 (2000-09-01), Yoon et al.
patent: 6563446 (2003-05-01), Sutardja
patent: 6664171 (2003-12-01), Gonzalez et al.
patent: 6680227 (2004-01-01), Kuo et al.
Chen Ken-Hui
Huang Lan-Ting
Liu Chen-Chin
Dang Phuc T.
Jianq Chyun IP office
Macronix International Co. Ltd.
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