Word line driving circuit of a semiconductor memory device

Electronic digital logic circuitry – Function of and – or – nand – nor – or not – Decoding

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326121, 36523006, 327306, 327108, H03K 301

Patent

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054123313

ABSTRACT:
A word line driving circuit for use in a semiconductor memory device having a first supply voltage terminal to which a pumping voltage higher than a supply voltage supplied from the exterior of a chip is applied and a second supply voltage terminal to which a ground voltage is applied includes a decoding circuit connected between the first supply voltage terminal and second supply voltage terminal, for receiving a decoded row address, a precharge circuit connected to an output terminal of the decoding circuit, a transfer circuit for receiving an output signal of the decoding circuit and a word line boosting signal, and a word line output circuit connected between the first supply voltage terminal and second supply voltage terminal, for driving a word line.

REFERENCES:
patent: 4571510 (1986-02-01), Seki et al.
patent: 5018107 (1991-05-01), Yoshida

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