Word-by-word electrically reprogrammable nonvolatile memory

Details Word-by-word electrically reprogrammable nonvolatile memory Word-by-word electrically reprogrammable nonvolatile memory

1979-06-12

1981-07-14

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Precharge

365218, 365189, 365230, 3072383, G11C 1140

Patent

active

042790247

ABSTRACT:
A word-by-word electrically reprogrammable nonvolatile memory has memory cells arranged in a matrix and provided with a control circuit, interconnected with the memory matrix in such a manner that variable erase and write durations are provided for each memory line. The termination of the variable durations is indicated by attainment of a predetermined erase or, respectively, write condition of one or more memory cells from the memory line to be erased or written. The erase or write condition of these cells is monitored during the erase or write duration of the memory line to provide a condition-effected termination of the variable duration.

REFERENCES:
patent: 3611319 (1971-10-01), Hyatt
patent: 4148044 (1979-04-01), Roessler
IEEE Transactions on Electron Devices, vol. ED-24, No. 5, May 1977, pp. 584-588, 606-608.
Seimens Forsch-u En Twickle-Ber. Bd. 4(1975), No. 4, Springer 1975, pp. 213-219.

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