Word-by-word electrically reprogrammable non-volatile memory and

Details Word-by-word electrically reprogrammable non-volatile memory and Word-by-word electrically reprogrammable non-volatile memory and

1987-09-21

1989-05-30

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Including signal comparison

365201, 3652385, G11C 700

Patent

active

048357421

ABSTRACT:
Word-by-word electrically reprogrammable non-volatile memory includes an array in matrix form of memory cells containing respective storage transistors, the storage transistors having reading windows of different widths, respectively, in at least two subregions of the memory and a method of operation thereof.

REFERENCES:
patent: 4087795 (1978-05-01), Rossler
patent: 4279024 (1981-07-01), Schrenk
W. S. Johnson et al., "16-K EE-PROM Relies on Tunneling for Byte-Erasable Program Storage", Electronics, Feb. 28, 1980, pp. 113-117.

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