Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-05-02
2006-05-02
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
Reexamination Certificate
active
07038325
ABSTRACT:
In a semiconductor device having a three-layered buffer layer comprising core layer1having interconnected foams such as a three-dimensional reticular structure and adhesive layers2provided on both sides of the core layer as a stress buffer layer between semiconductor chip5and wiring4to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of the core layer1to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.
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Anjoh Ichiro
Eguchi Shuji
Ishii Toshiaki
Kokaku Hiroyoshi
Mita Mamoru
Antonelli, Terry Stout and Kraus, LLP.
Hitachi Cable Ltd.
Weiss Howard
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