Wiring structure of a semiconductor device, method of...

Details Wiring structure of a semiconductor device, method of... Wiring structure of a semiconductor device, method of...

2007-05-16

2010-06-29

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S628000, C438S631000, C438S634000, C438S637000, C257SE21257, C257SE21579, C257SE21585, C257SE23019

Reexamination Certificate

active

07745325

ABSTRACT:
A wiring structure of a semiconductor device may include an insulation interlayer on a substrate, the insulation interlayer having a linear first trench having a first width and a linear second trench having a second width, the linear second trench being in communication with a lower portion of the linear first trench, the first width being wider than the second width, and a conductive layer pattern in the linear first and second trenches.

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