Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-04-13
2010-10-19
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S482000, C438S585000, C257SE21159, C257SE21169, C257SE21297
Reexamination Certificate
active
07816191
ABSTRACT:
By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1 ×1010cm2to 1×1010dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ•cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.
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Sato Keiji
Takayama Toru
Yamazaki Shunpei
Garber Charles D
Husch Blackwell LLP Welsh & Katz
Lee Cheung
Semiconductor Energy Laboratory Co,. Ltd.
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