Wiring material, semiconductor device provided with a wiring...

Details Wiring material, semiconductor device provided with a wiring... Wiring material, semiconductor device provided with a wiring...

2011-03-15

2011-03-15

Graybill, David E (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S649000, C438S656000, C438S686000, C438S683000, C438S685000

Reexamination Certificate

active

07906429

ABSTRACT:
A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010dyn/cm2to 1×1010dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

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