Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-26
2008-08-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S741000, C257SE23141, C257SE23168
Reexamination Certificate
active
07411259
ABSTRACT:
An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained.
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Takayama Toru
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Pert Evan
Semiconductor Energy Laboratory Co,. Ltd.
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