Wire-type semiconductor devices and methods of fabricating...

Details Wire-type semiconductor devices and methods of fabricating... Wire-type semiconductor devices and methods of fabricating...

2007-03-16

2010-02-16

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S317000, C257S321000, C257SE29128, C438S284000, C438S335000

Reexamination Certificate

active

07663166

ABSTRACT:
Provided are relatively higher-performance wire-type semiconductor devices and relatively economical methods of fabricating the same. A wire-type semiconductor device may include at least one pair of support pillars protruding above a semiconductor substrate, at least one fin protruding above the semiconductor substrate and having ends connected to the at least one pair of support pillars, at least one semiconductor wire having ends connected to the at least one pair of support pillars and being separated from the at least one fin, a common gate electrode surrounding the surface of the at least one semiconductor wire, and a gate insulating layer between the at least one semiconductor wire and the common gate electrode.

REFERENCES:
patent: 6664582 (2003-12-01), Fried et al.
patent: 7456476 (2008-11-01), Hareland et al.
patent: 2005/0167650 (2005-08-01), Orlowski et al.
patent: 2005/0266645 (2005-12-01), Park
patent: 2007/0029586 (2007-02-01), Orlowski

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