Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-05
2011-04-05
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29139, C257SE29111, C257SE29151, C257SE29160, C257SE29159, C257SE29158, C257SE33063
Reexamination Certificate
active
07919795
ABSTRACT:
Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper, copper solid solution layer.
REFERENCES:
patent: 6201590 (2001-03-01), Ohta et al.
patent: 6255706 (2001-07-01), Watanabe et al.
patent: 6803975 (2004-10-01), Kim et al.
patent: 7157323 (2007-01-01), Gan et al.
patent: 2007/0093003 (2007-04-01), Wu et al.
patent: 2008/0009108 (2008-01-01), Lin et al.
Jeong Chang-Oh
Kim Do-Hyun
Lee Eun-Guk
Lee Je-Hun
Cao Phat X
Garrity Diana C
Innovation Counsel LLP
Samsung Electronics Co,. Ltd.
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