Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2011-01-11
2011-01-11
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S737000, C257SE23024, C257SE21509, C438S617000
Reexamination Certificate
active
07868468
ABSTRACT:
A semiconductor package has a semiconductor die disposed on a substrate. A bond wire is connected between a first bonding site on the semiconductor die and a second bonding site on the substrate. The first bonding site is a die bond pad; the second bonding site is a stitch bond. The second bonding site has a bond finger formed on the substrate, a conductive layer in direct physical contact with the bond finger, and a bond stud coupled to the bond wire and in direct physical contact with the conductive layer to conduct an electrical signal from the semiconductor die to the bond finger. The bond finger is made of copper. The conductive layer is made of copper or gold. The bond stud is made of gold and overlies a side portion and top portion of the copper layer.
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Han Byung Joon
Lee Hun-Teak
Pendse Rajendra D.
Parekh Nitin
Stats Chippac Ltd.
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