Wire bonding on reactive metal surfaces of a metallization...

Details Wire bonding on reactive metal surfaces of a metallization... Wire bonding on reactive metal surfaces of a metallization...

2009-02-05

2011-10-25

Andujar, Leonardo (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S615000

Reexamination Certificate

active

08043956

ABSTRACT:
In semiconductor devices having a copper-based metallization system, bond pads for wire bonding may be formed directly on copper surfaces, which may be covered by an appropriately designed protection layer to avoid unpredictable copper corrosion during the wire bond process. A thickness of the protection layer may be selected such that bonding through the layer may be accomplished, while also ensuring a desired high degree of integrity of the copper surface.

REFERENCES:
patent: 2004/0099961 (2004-05-01), Chu et al.
patent: 2005/0224987 (2005-10-01), Hortaleza et al.
patent: 2006/0170114 (2006-08-01), Su et al.
patent: 2008/0213996 (2008-09-01), Dubin et al.
patent: 06097292 (1994-04-01), None
patent: WO 03/075340 (2003-09-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 016 427.5 dated Dec. 9, 2008.

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