Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-10-21
2010-12-14
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S738000, C257S784000, C228S180500
Reexamination Certificate
active
07851347
ABSTRACT:
Wire bonding method for reducing height of a wire loop in a semiconductor device, including a first bonding step of bonding an initial ball formed at a tip end of a wire onto a first bonding point using a capillary, thereby forming a pressure-bonded ball; a wire pushing step of pushing the wire obliquely downward toward the second bonding point at a plurality of positions by repeating a sequential movement for a plurality of times, the sequential movement including moving of the capillary substantially vertically upward and then obliquely downward toward the second bonding point by a distance shorter than a rising distance that the capillary has moved upward; and a second bonding step of moving the capillary upward and then toward the second bonding point, and bonding the wire onto the second bonding point by pressure-bonding.
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Kiuchi Hayato
Mii Tatsunari
Tei Shinsuke
Androlia William L.
Ida Geoffrey
Kabushiki Kaisha Shinkawa
Koda H. Henry
Le Thao X
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