Wire bonding for thin semiconductor package

Details Wire bonding for thin semiconductor package Wire bonding for thin semiconductor package

2007-03-20

2007-03-20

Parker, Kenneth (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000, C438S613000, C438S615000, C438S508000, C257S780000, C257S784000, C228S180220, C228S180500

Reexamination Certificate

active

10952156

ABSTRACT:
An assembly of a semiconductor chip (301) having an integrated circuit (IC) including at least one contact pad (320) on its surface (301a), wherein the contact pad has a metallization suitable for wire bonding, and an interconnect bonded to said contact pad. This interconnect includes a wire (304) attached to the pad by ball bonding (305), a loop (306) in the wire closed by bonding the wire to itself (307) near the ball, and a portion (307) of the remainder of the wire extended approximately parallel to the surface. The interconnect can be confined to a space (308) equal to or less than three ball heights from the surface.

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