Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-09-04
2010-11-30
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S734000, C257S774000, C257S776000, C257S779000, C257S784000, C257S786000, C257SE23019, C257SE23020, C257SE23142, C257SE23143
Reexamination Certificate
active
07843069
ABSTRACT:
A wire bond pad and method of fabricating the wire bond pad. The method including: providing a substrate; forming an electrically conductive layer on a top surface of the substrate; patterning the conductive layer into a plurality of wire bond pads spaced apart; and forming a protective dielectric layer on the top surface of the substrate in spaces between adjacent wire bond pads, top surfaces of the dielectric layer in the spaces coplanar with coplanar top surfaces of the wire bond pads.
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Daubenspeck Timothy H.
Gambino Jeffrey P.
Muzzy Christopher D.
Sauter Wolfgang
Canale Anthony J.
Gumedzoe Peniel M
International Business Machines - Corporation
Lee Eugene
Schmeiser Olsen & Watts
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