Wide dynamic range sensor having a pinned diode with...

Details Wide dynamic range sensor having a pinned diode with... Wide dynamic range sensor having a pinned diode with...

2007-07-03

2007-07-03

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S233000, C257S234000, C257SE27133

Reexamination Certificate

active

10921226

ABSTRACT:
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two pinned voltage regions and two anti-blooming transistors. Methods of fabricating the exemplary pixel cells are also disclosed.

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