Method for removing oxides from a Ge semiconductor substrate...

Details Method for removing oxides from a Ge semiconductor substrate... Method for removing oxides from a Ge semiconductor substrate...

2007-07-03

2007-07-03

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S083000, C216S100000, C216S108000, C252S079100, C438S752000

Reexamination Certificate

active

10943494

ABSTRACT:
This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.

REFERENCES:
patent: 2827367 (1958-03-01), Cox
patent: 3577286 (1971-05-01), Berkenblit et al.
patent: 3979240 (1976-09-01), Ghezzo
patent: 4380490 (1983-04-01), Aspnes et al.
patent: 5051134 (1991-09-01), Schnegg et al.
patent: 5300463 (1994-04-01), Cathey et al.
patent: 6833195 (2004-12-01), Lei et al.
patent: 2004/0076813 (2004-04-01), Han et al.
patent: 2005/0106893 (2005-05-01), Wilk
patent: 2005/0196962 (2005-09-01), Demeurisse et al.
patent: 59-157000 (1994-06-01), None
Lu et al. “Structure of the CI-passivated Ge (111) surface determined using X-ray absorption and first principles calculations”, Surf. Sci., 44, L948 (1999).
Okumura et al. “Carbon contamination free Ge (100) surface cleaning for MBE”, Appl. Surf. Sci., 125, 125 (1998).
Deegan et al. “XPS Study of the HF Etching of Native Oxides on Ge (111) and Ge (100) Surfaces”, Appl. Surf. Sci. 123/124, 66 (1998).
Hill et al., Chemicala Physics Letters, 44(2), p. 225, (1976).
European Search Report for corresponding European Application No. EP 04447203.3, mailed Jul. 1, 2005.
Deegan, et al.,An X-Ray Photoelectron Spectroscopy Study of the HF Etching of Native Oxides on GE(111)and Ge(100)Surfaces, Applied Surface Science vol., 123/124, 1998, pp. 66-70 XP 002332288.
Okumura, H, et al,Corbon Contamination Free Ge(100 Surface Cleaning for MBEn, Applied Surface Science, vol., 125, 1998, pp. 125-128. XP002332289.
Akane, et al,New GE Substrates Cleaning Method for Sil-x-yGexCy MOMBE Growth, Thin Solid Films, Elsevier-Sequioa, S.A. Lausanne, CH, vol. 294, No. 1-2, Feb. 15, 1997, pp. 153-156.
Qing, Ma, et al,Synchrotron-Radiation-Induced Wet Etching of Germanium, Applied Physics Letters, American institute of Physics, New York, vol. 81, No. 9, Aug. 26, 2002 pp. 1741-1742.

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