Wet-chemical, developable, etch-stable photoresist for UV radiat

Details Wet-chemical, developable, etch-stable photoresist for UV radiat Wet-chemical, developable, etch-stable photoresist for UV radiat

1998-05-27

2000-05-16

Hamilton, Cynthia

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

4302811, 4302861, 4302871, 4302851, 430326, 430330, G03F 740

Patent

active

060635495

ABSTRACT:
Photoresist compositions are described, which are sufficiently transparent in the solvent-free state for radiation of a wavelength of approximately 193 nm, and which contain nonaromatic chemical groups, which can be converted into groups with aromatic structural elements (latent aromatic groups) under process conditions, for which an image structure comprised of the resist material is not disrupted. A preferred component with latent aromatic groups is bicyclo[3.2.2]nona-6,8-dien-3-one. Resist coatings, which are produced with these compositions, show a stability in plasma etching, which is comparable with the stability of conventional resists based on phenolic resins.

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patent: 5248734 (1993-09-01), Ober et al.
patent: 5369200 (1994-11-01), Schaedeli et al.
Derwent Abstract No. 93-122216 of JP-A-05-061168 Mar. 12, 1993.
Kim et al. Chemical Abstract 119:118924 of J. Macromol. Sci., Pure Appl. Chem. (1993), A30 (12), 877-97.

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