Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-06-14
2005-06-14
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S103000, C117S104000, C385S141000, C385S142000
Reexamination Certificate
active
06905542
ABSTRACT:
A waveguide structure and method of fabricating the same, the method comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, and a lattice constant adjusting material, wherein the concentration of the second optical material increases with the height of the first graded layer and the concentration of the lattice constant adjusting material varies in proportion to the second optical material; and forming a second graded layer, the second graded layer comprising the first and second optical materials, and a lattice constant adjusting material, wherein the concentration of the second optical material decreases with the height of the second graded layer and the concentration of the lattice constant adjusting material varies in proportion to the second optical material.
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Berlin Dean E.
Samoilov Arkadii V.
Bach Joseph
Kunemund Robert
Morris Frank
Zheng Jamie
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