Water vapor annealing process

Details Water vapor annealing process Water vapor annealing process

1996-01-05

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438795, H01L 2131

Patent

active

061367281

ABSTRACT:
A method of fabricating semiconductor devices including the steps of forming a silicon-based dielectric layer containing nitrogen having a concentration that is in a range of a fraction of a percent up to stoichiometric Si.sub.3 N.sub.4 ; and annealing the dielectric layer in a water vapor atmosphere.

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Copy of PCT Written Opinion dated Nov. 5, 1997.
Samo, et al., "High Quality SiO.sub.2 /Si Interfaces of Poly-Crystalline Silicon Thin Film Transistors by Annealing in Wet Atmosphere," (16)157-160 (1995), IEEE Electron Dev. Lett.

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