Water soluble negative tone photoresist

Details Water soluble negative tone photoresist Water soluble negative tone photoresist

2006-04-25

2006-04-25

Ashton, Rosemary (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S252000, C430S325000

Reexamination Certificate

active

07033735

ABSTRACT:
A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

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Co-pending U.S. Appl. No. 10/002,986, filed on Nov. 30, 2001, same assignee, “Improvement of Contact Hole Printing by Packing and Unpacking.”
Co-pending U.S. Appl. No. 10/443,359, filed on May 22, 2003, same assignee, “Water Soluble Negative Tone Photoresist.”
Co-pending U.S. Appl. No. 10/268,586, filed on Oct. 10, 2002, same assignee, “Method for Preventing the Etch Transfer of Sidelabes in Contact Hole Patterns.”

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