Water based photoresist

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430281, 430289, G03C 500, G03C 1495, G03C 166

Patent

active

041949129

ABSTRACT:
A positive-acting water-based photoresist comprising a polyethylene imine, a dichromate sensitizer and the balance water.

REFERENCES:
patent: 2604388 (1952-07-01), Staehle
patent: 2687958 (1954-08-01), Neugebauer
patent: 2937085 (1960-05-01), Seven et al.
patent: 3154479 (1964-10-01), Onishi et al.
patent: 3205156 (1965-09-01), Atarashi
patent: 3265527 (1966-08-01), Adelman
patent: 3651170 (1972-03-01), Silver
patent: 3759711 (1973-09-01), Rauner et al.
patent: 3778270 (1973-12-01), Roos
Datta, P. et al., A Study of Photochemical Reactions in a Dichromated Photoresist, (Paper Submitted at Int. Symposium on Advances in Photopolymer Systems-11/1978), pp. 25-28.
Hopkins et al., "Gen. Chem. for Colleges," D. C. Heath & Co., 1956, pp. 609-610.
Kirk-Othmar, "Encyclopedia of Chem. Tech.," vol. 17, 2nd Ed., pp. 406-407.
Kosar, J., "Light-Sensitive Systems," Wiley & Sons, 1965, pp. 51-54 and 67-71.
Saunders, T. F., "IBM Tech. Discl. Bulletin," vol. 10, No. 1, 6/1967, p. 64.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Water based photoresist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Water based photoresist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Water based photoresist will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1400352

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.