Waferless automatic cleaning after barrier removal

Details Waferless automatic cleaning after barrier removal Waferless automatic cleaning after barrier removal

2007-05-01

2007-05-01

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S905000, C134S001200

Reexamination Certificate

active

10828065

ABSTRACT:
A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.

REFERENCES:
patent: 6060397 (2000-05-01), Seamons et al.
patent: 2002/0052114 (2002-05-01), Marks
patent: 2003/0032278 (2003-02-01), Chen et al.
patent: 2005/0079706 (2005-04-01), Kumar et al.

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