Wafer table for local dry etching apparatus

Details Wafer table for local dry etching apparatus Wafer table for local dry etching apparatus

2006-02-28

2006-02-28

Kackar, Ram N (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With workpiece support

C156S345330, C156S345390, C216S058000, C216S067000, C216S071000, C438S706000, C438S710000, C438S711000, C438S712000, C438S719000, C438S730000

Reexamination Certificate

active

07005032

ABSTRACT:
To resolve a problem that an etching rate profile is changed by a position of a nozzle relative to a semiconductor wafer and accordingly, at a vicinity of an outer edge of the semiconductor wafer, an accurate machining result is difficult to achieve, gas including activated species produced by plasma is blown from a nozzle locally to a surface of the semiconductor wafer W supported on a wafer table concentrically therewith to thereby remove unevenness on the surface of the semiconductor wafer. In this case, the wafer table is provided with a radius larger than a radius of the semiconductor wafer supported thereby by an outstretched portion to thereby prevent an outer edge from being removed excessively by reflected gas.

REFERENCES:
patent: 5980769 (1999-11-01), Yanagisawa et al.
patent: 6136213 (2000-10-01), Shinozuka et al.
patent: 09-027482 (1997-01-01), None
patent: 2001-04674 (2001-02-01), None

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