Wafer surface temperature control for deposition of thin films

Details Wafer surface temperature control for deposition of thin films Wafer surface temperature control for deposition of thin films

1996-07-12

1998-11-10

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

4272481, 4272552, 427314, 4273742, 438680, 438681, 438758, C23C 1652

Patent

active

058340688

ABSTRACT:
A method for improving the characteristics of deposited thin films by improved control and stabilization of wafer surface temperatures. Further, the invention provides the ability to rapidly change the temperature of the wafer surface without the need to change the temperature of the chamber. The wafer is heated to an operating temperature by conventional means. A gas with high thermal conductivity, such as helium or hydrogen, is passed over the wafer to cool its surface to a desired temperature for the process to be performed. The flow rate is then adjusted to stabilize the temperature of the wafer and reduce surface temperature variations. Processing gases are then introduced into the chamber, and deposition onto the wafer commences. The maintenance of correct wafer surface temperature results in improved step coverage and conformality of the deposited film. Post-deposition steps such as plasma annealing may be performed using a gas compatible with the process at a flow rate which results in a temperature desirable for the post-deposition process.

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patent: 5470619 (1995-11-01), Ahn et al.
patent: 5576071 (1996-11-01), Sandhu
Baushah et al., Deposition Technologies For Films and Coatings, Noyes Publications, Park Ridge, NJ, (1982) pp. 365-366 (no month).

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