Electricity: electrical systems and devices – Electric charge generating or conducting means – Use of forces of electric charge or field
Patent
1996-07-25
1999-03-23
Fleming, Fritz
Electricity: electrical systems and devices
Electric charge generating or conducting means
Use of forces of electric charge or field
279128, H02N 1300
Patent
active
058868631
ABSTRACT:
A wafer support member comprises a base made of ceramics with thickness of 3 mm or more, a metallic electrode plate with thickness of 0.5 mm or more bonded onto the base, and an attraction surface composed of an aluminum nitride film with thickness of 0.01 to 0.5 mm coated on the surface of the electrode plate. The electrode plate functions as a plasma generating electrode when high frequency voltage is applied to the electrode plate and as an electrostatic attraction electrode when direct-current high voltage is applied to the electrode plate. Also, a wafer holding device for holding a wafer such as semiconductor wafer and glass substrate for liquid crystal is disclosed. The wafer holding device comprises a base body of aluminum nitride sintered body containing resistance heating elements therein. Lead terminals for feeding power to the resistance heating elements are formed in the lower surface of the base body. In one feature, at least the lead terminals and junction thereof are coated with a ceramic film composed of any one of silicon carbide, silicon nitride, sialon, and aluminum nitride. In another feature, the base body has a flat surface for forming an attraction surface, an outer circumference and penetration holes. Each of the penetration holes opens in the flat surface, and has an inner wall. An aluminum nitride film covers the flat surface, the outer circumference, and the inner wall of each of the penetration holes.
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Aida Hiroshi
Kawanabe Yasunori
Kitazawa Kenji
Kuchimachi Kazuhiro
Nagano Saburo
Fleming Fritz
Kyocera Corporation
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