Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-07-17
1989-06-27
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156345, B44C 122, D05D 306, C03C 1500, C03C 2506
Patent
active
048426865
ABSTRACT:
A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.
REFERENCES:
patent: 3439238 (1969-04-01), William et al.
patent: 3765763 (1973-10-01), Nygaard
patent: 3916822 (1975-11-01), Robinson
patent: 4250428 (1981-02-01), Olivier et al.
patent: 4293249 (1981-10-01), Whelan
patent: 4306292 (1981-12-01), Head
patent: 4393095 (1983-07-01), Greenburg
patent: 4439243 (1984-03-01), Titus
patent: 4439244 (1984-03-01), Allevato
patent: 4447469 (1984-05-01), Peters
patent: 4465898 (1984-08-01), Orcutt et al.
patent: 4493977 (1985-01-01), Arai et al.
patent: 4529475 (1985-07-01), Okano
patent: 4547247 (1985-10-01), Warenback et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4588610 (1986-05-01), Yamazaki
patent: 4609103 (1986-09-01), Bimer et al.
patent: 4615905 (1986-10-01), Ovshinsky et al.
patent: 4629635 (1986-12-01), Brors
patent: 4632057 (1986-12-01), Price et al.
patent: 4664938 (1987-05-01), Walker
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4685999 (1987-08-01), Davis et al.
patent: 4687542 (1987-08-01), Davis et al.
Lucovsky et al., "Deposition of Dielectric Films by Remote Plasma Enhanced CVD", Mat. Res. Soc. Symp. Proc., vol. 68, 1986, pp. 323-334.
Sakai et al., "Sealing Concept of Elastic Metal Gasket `Helicoflex`", 32, Vacuum, 33 (1982).
Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", 26, IEEE Transactions on Nuclear Science, 4000 (1979).
Fleming et al., "Development of Bakable Seal for Large Non-Circular Ports on the Tokamak Fusion Test Reactor", 17, Journal of Vac. Science and Technology, 337 (1980).
Accomazzo et al., "Ultrahigh Efficiency Membrane Filters for Semiconductor Process Gases", Solid State Technology, 27(3), pp. 141-146 (1984).
Kasper et al., "A Gas Filtration System for 10.sup.5 Particles/CM.sup.3 ", Aerosol Science and Technology, 5(2), pp. 167-185 (1986).
M. L. Malczewski, J. D. Borkman, and G. T. Vardian, "Measurement of Particulates in Filtered Process Gas Streams", Solid State Technology, 29(4), pp. 151-157 (1986).
C. M. Van Atta, "Vacuum Science and Engineering", McGraw-Hill, New York, p. 31.
R. A. Bowling, "An Analysis of Adhesion on Semiconductor Surfaces", Journal of the Electrochemical Society, 132 (9), pp. 2208-2214 (1985).
"Grooves Reduce Aircraft Drag", NASA Tech. Briefs, 5 (2), p. 192.
"Mission Accomplished", NASA Tech. Briefs, 117 (3), pp. 82-83 (1987).
C. J. Howard, J. Phys. Chem., vol. 83, p. 6 (1979).
H. Schlichting, "Boundary-Layer Theory", 7th Edition, McGraw Hill, New York (1979).
S. V. Nguyen, "Plasma Assisted Chemical Vapor Deposited Thin Films for Microelectronic Applications", J. Vac. Sci. Technol., B4 (5), Sep./Oct. 1986, pp. 1159-1167.
S. Nishino et al., "SiO.sub.2 Deposition by Photo-Initiation", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 209-212.
C. J. Mogab, "Plasma Etching of Si and SiO.sub.2 --The Effect of Oxygen Additions to CF.sub.4 Plasmas", J. Appl. Phys., vol. 49, No. 7, Jul. 1978, pp. 3796-3803.
D. L. Flamm et al., "Reaction of Fluorine Atoms with SiO.sub.2 ", J. Appl. Phys. 50, (10), Oct. 1979, pp. 6211-6213.
D. L. Flamm et al., "The Reaction of Fluorine Atoms with Silicon", J. Appl. Phys. 52, (6), 1981, pp. 3633-3639.
G. Smolinski et al., "The Plasma Oxidation of CF.sub.4 in a Tubular-Alumina Fast-Flow Reactor", J. Appl. Phys., 50 (7), Jul. 1979, pp. 4982-4987.
J. F. Gibbons et al., "Limited Reaction Processing: Silicon Epitaxy", Appl. Phys. Lett., 47 (7), 1 Oct. 1985, pp. 721-723.
A. Yamada et al., "Photochemical Vapor Deposition of Single-Crystal Silicon at a Very Low Temperature of 200.degree. C.", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 217-220.
K. Tsujimoto et al., "A New Sidewall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 229-232.
Robert R. Krchnavek et al., "Photo Deposition Rates of Metal from Metal Alkyls", J. Vac. Sci. Technol., B 5 (1), Jan./Feb. 1987, pp. 20-26.
Hiroyuki Yokoyama, "Photo Induced Surface Morphology Improvement and Preferential Orientation Enhancement in Film Deposition of Evaporated ZnS", Appl. Phys. Lett., 49 (20), 17 Nov. 1986, pp. 1354-1356.
J. B. Mullin et al., "Ultraviolet Assisted Growth of II-VI Compounds", J. Vac. Sci. Technol. A, vol. 4, No. 3, May/Jun. 1986, pp. 700-703.
S. Oda et al., "Hydrogen Radical Assisted Chemical Vapor Deposition of ZnSe", Appl. Phys. Lett., 48 (1), 6 Jan. 1986, pp. 33-35.
R. A. Levy et al., "Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications", J. Electrochem. Soc.: Reviews and News, Feb. 1987, pp. 37C-49C.
Carl E. Larson et al., "Chemical Vapor Deposition of Gold", Aug. 11, 1986, IBM Almaden Research Center, San Jose, CA 91520, p. 266.
Paul A. Robertson et al., "Photo Enhanced Deposition of Silicon Oxide Thin Films Using an Internal Nitrogen Discharge Lamp", Fall 1986, Materials Research Society Symposium, Dec. 1986.
J. Praraszczak et al., "Methods of Creation and Effect of Microwave Plasmas Upon the Etching of Polymers and Silicon", Microelectronic Engineering, 3 (1985), pp. 397-410.
C. Arnone et al., Study of Photo-Induced Thin Film Growth on CdS Substrates, Mat. Res. Soc. Symp. Proc., vol. 29 (1984), pp. 275-281.
Helicoflex Company, Catalog H, 001, 002, Resilient Metal Seals and Gaskets.
P. D. Richard et al., "Remote Plasma Enhanced CVD Deposition of Silicon Nitride and Oxide for Gate Insulators in (In, Ga) As FET Devices", J. Vac. Sci. Technol., A3 (3), May/Jun. 1985, pp. 867-872.
G. Lucovsky et al., "Deposition of Silicon Dioxide and Silicon Nitride by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol., A4 (3), May/Jun. 1986, pp. 681-688.
D. E. Tsu et al., "Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol., A4 (3), May/Jun. 1986, pp. 480-485.
Advertisement, "Dry Stripper", Samco/March, Solid State Technology, 30 (3), Mar. 1987, p. 45.
F. Paneth et al., "Paneth's Lead-Mirror Experiment", Ber. Dt. Chem. Ges. B62 1335 (1929).
Hajime Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", J. Vac. Sci. Technol., 15(6), Nov./Dec. 1978, pp. 1853-1854.
S. Mehta et al., "Blanket CVD Tungsten Interconnect for VLSI Devices", Jun. 9-10, 1986, V-MIC Conf., pp. 418-435.
M. E. Burba et al., "Selective Dry Etching of Tungsten for VLSI Metallization", J. Electrochem. Soc.: Solid State Science and Technology, Oct. 1986, pp. 2113-2118.
S. Iwata et al., "A New Tungsten Gate Process for VLSI Applications", IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984, pp. 1174-1179.
C.-K. Hu et al., "Reactive Ion Etching of CVD and Sputtered Tungsten Films", IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y. 10598, two pages.
IBM, "Anisotropic and Selective Etching of Tungsten Silicide-Tungsten-Tungsten-Silicide Composite Stack", IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, p. 1
Davis Cecil J.
Jones John I.
Jucha Rhett B.
Loewenstein Lee M.
Matthews Robert T.
Comfort James T.
Powell William A.
Rogers Joseph E.
Sharp Melvin
Texas Instruments Incorporated
LandOfFree
Wafer processing apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Wafer processing apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer processing apparatus and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-811048