Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-11-13
2007-11-13
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C438S106000
Reexamination Certificate
active
11186840
ABSTRACT:
This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
REFERENCES:
patent: 7060526 (2006-06-01), Farnworth et al.
Chen Shou-Lung
Chen Yu-Hua
Hsiao Ching-Wen
Ko Jeng-Dar
Lin Jyh-Rong
Industrial Technology Research Institute
Vu David
LandOfFree
Wafer-leveled chip packaging structure and method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Wafer-leveled chip packaging structure and method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer-leveled chip packaging structure and method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3886251