Wafer-level seal for non-silicon-based devices

Details Wafer-level seal for non-silicon-based devices Wafer-level seal for non-silicon-based devices

2005-01-25

2005-01-25

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S041000, C216S056000, C029S025350, C029S609100, C438S025000, C438S106000

Reexamination Certificate

active

06846423

ABSTRACT:
One embodiment disclosed relates to a method for sealing an active area of a non-silicon-based device on a wafer. The method includes providing a sacrificial material over at least the active area of the non-silicon-based device, depositing a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing the sacrificial material with a target atmosphere. Another embodiment disclosed relates to a non-silicon-based device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, a contact area, and a lithographically-formed structure sealing at least the active area and leaving at least a portion of the contact area exposed.

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