Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-11
2005-01-11
Niebling, John F. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C257S389000, C257S900000, C257SE21422, C257SE21421, C257SE29152, C257SE29133
Reexamination Certificate
active
06841826
ABSTRACT:
A low-GIDL current MOSFET device structure and a method of fabrication thereof which provides a low-GIDL current. The MOSFET device structure contains a central gate conductor whose edges may slightly overlap the source/drain diffusions, and left and right side wing gate conductors which are separated from the central gate conductor by a thin insulating and diffusion barrier layer.
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Dokumaci Omer H.
Doris Bruce B.
Gluschenkov Oleg
Mandelman Jack A.
Radens Carl J.
Abate Esq. Joseph P.
International Business Machines - Corporation
Niebling John F.
Pompey Ron
Scully Scott Murphy & Presser
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