Wafer level packaging cap and fabrication method thereof

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Including contaminant removal or mitigation

Reexamination Certificate

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Details

C438S125000, C257S704000, C257SE21500, C257SE21505

Reexamination Certificate

active

07449366

ABSTRACT:
A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.

REFERENCES:
patent: 5561085 (1996-10-01), Gorowitz et al.
patent: 6756668 (2004-06-01), Baek et al.
patent: 6953990 (2005-10-01), Gallup et al.
patent: 7061099 (2006-06-01), Lu et al.
patent: 7275424 (2007-10-01), Felton et al.
patent: 7357017 (2008-04-01), Felton et al.
patent: 7368080 (2008-05-01), Tamura et al.

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