Wafer level packaging

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S462000, C438S612000, C438S667000, C257SE23023, C257SE23011

Reexamination Certificate

active

07820484

ABSTRACT:
Through vias in a substrate are formed by creating a trench in a top side of the substrate and at least one trench in the back side of the substrate. The sum of the depths of the trenches at least equals the height of the substrate. The trenches cross at intersections, which accordingly form the through vias from the top side to the back side. The through vias are filled with a conductor to form contacts on both sides and the edge of the substrate. Contacts on the backside are formed at each of the trench. The through vias from the edge contacts. Traces connect bond pads to the conductor in the through via. Some traces are parallel to the back side traces. Some traces are skew to the back side traces. The substrate is diced to form individual die.

REFERENCES:
patent: 4871418 (1989-10-01), Wittlinger et al.
patent: 4961821 (1990-10-01), Drake et al.
patent: 5166097 (1992-11-01), Tanielian
patent: 5825076 (1998-10-01), Kotvas et al.
patent: 6096635 (2000-08-01), Mou et al.
patent: 7712211 (2010-05-01), Chia et al.
patent: 0802416 (1997-10-01), None
patent: 61064176 (1986-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Wafer level packaging does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer level packaging, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer level packaging will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4234855

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.