Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-04
2009-12-15
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S640000, C438S678000, C438S681000, C257S698000, C257S774000, C257SE23174
Reexamination Certificate
active
07632753
ABSTRACT:
A method of forming a wafer level package includes attaching a laser-activated dielectric material to an integrated circuit substrate to form an assembly, the integrated circuit substrate including a plurality of electronic components having terminals on first surfaces thereof. The laser-activated dielectric material is laser activated and ablated with a laser to form laser-ablated artifacts in the laser-activated dielectric material and simultaneously to form an electrically conductive laser-activated layer lining the laser-ablated artifacts. The laser-ablated artifacts are filled using an electroless plating process in which an electrically conductive filler material is selectively plated on the laser-activated layer to form an embedded circuit pattern within the laser-activated dielectric material.
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Huemoeller Ronald Patrick
Kuo Bob Shih-Wei
Rusli Sukianto
Amkor Technology Inc.
Gunnison McKay & Hodgson, L.L.P.
Hodgson Serge J.
Thai Luan C
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