Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2009-07-01
2010-11-23
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S773000, C257SE23023, C257SE23168
Reexamination Certificate
active
07838992
ABSTRACT:
In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.
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“Wafer Level Package Having a Stress Relief Spacer and Manufacturing Method Thereof,” Specification, Drawings, and Prosecution History of U.S. Appl. No. 11/355,545, filed Feb. 15, 2006, by Hyun-Soo Chung, et al., which is stored in the United States Patent and Trademark Office (USPTO) Image File Wrapper (IFW) system.
Chung Hyun-Soo
Jang Dong-Hyun
Lee Dong-Ho
Lee Ho-Jin
Malsawma Lex
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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