Wafer level die integration and method therefor

Details Wafer level die integration and method therefor Wafer level die integration and method therefor

2011-08-09

2011-08-09

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S055000, C257SE21512, C257SE21513, C216S014000, C216S040000, C361S808000

Reexamination Certificate

active

07993972

ABSTRACT:
A method of manufacturing a semiconductor device includes providing a wafer for supporting the semiconductor device. An insulation layer is disposed over a top surface of the wafer. The method includes forming a first interconnect structure over the top surface of the wafer with temperatures in excess of 200° C., forming a metal pillar over the wafer in electrical contact with the first interconnect structure, connecting a semiconductor component to the first interconnect structure, and forming encapsulant over the semiconductor component. The encapsulant is etched to expose a portion of the metal pillar. A buffer layer is optionally formed over the encapsulant. The method includes forming a second interconnect structure over the encapsulant in electrical contact with the metal pillar with temperatures below 200° C., and removing a portion of a backside of the wafer opposite the top surface of the wafer.

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