Wafer level chip scale package, method of manufacturing the...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S786000, C257SE23020, C257S778000

Reexamination Certificate

active

07830017

ABSTRACT:
Provided are a wafer level chip scale package in which a redistribution process is applied at a wafer level, a manufacturing method thereof, and a semiconductor chip module including the wafer level chip scale package. The wafer level chip scale package includes a semiconductor chip having a bonding pad, a first insulating layer disposed on the semiconductor chip so as to expose the bonding pad, a redistribution line disposed on the exposed bonding pad and the first insulating layer, a sacrificial layer disposed below a redistribution pad of the redistribution line, a second insulating layer disposed on the redistribution line so as to expose the redistribution pad and including a crack inducement hole disposed beside the sacrificial layer, and an external connection terminal attached to the redistribution pad.

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patent: 10-0596452 (2006-06-01), None
English language abstract of Japanese Publication No. 11-046054.
English language abstract of Korean Publication No. 2001-0061782.
English language abstract of Korean Publication No. 10-0596452.

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