Wafer integrated plasma probe assembly array

Details Wafer integrated plasma probe assembly array Wafer integrated plasma probe assembly array

2005-12-06

2005-12-06

Nguyen, Vinh P. (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S761010

Reexamination Certificate

active

06972579

ABSTRACT:
A wafer integrated plasma diagnostic apparatus for semiconductor wafer processing system having a multiplicity of plasma probe assemblies arranged on a wafer in a planar array fashion such that one plasma probe assembly is in the center and eight more plasma probe assemblies are at intermediate positions such that they lie along the radius from the center to the corners; such corners forming four corners of a square box near the edge of the wafer. At each location and in each of the plasma probe assemblies, there are six possible probe elements having a relative geometrical area such that they are capable of making simultaneous measurements of both spatial resolution and real time measurement of different plasma characteristics at the wafer surface, such as: D.C. potential, A.C. potential, shading induced potentials, ion fluxes, ion energy distribution, and the electron part of the I-V Langmuir probe characteristic.

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