Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2006-09-11
2008-10-14
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE23001, C257SE23002
Reexamination Certificate
active
07436047
ABSTRACT:
A wafer that is less susceptible to chipping or peeling during a sawing process is disclosed. The wafer includes a plurality of chips, scribe lanes formed between the plurality of chips, and a passivation film, which is formed on the plurality of chips and the scribe lanes and has a plurality of perforations, e.g. slit patterns engraved on each scribe lane. A photolithography reticle and method of manufacturing the wafer are also provided.
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English language abstract of Korean Publication No. 2003-0001880.
English language abstract of Korean Publication No. 2005-0010698.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Zarneke David A
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