Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1996-12-16
1998-03-03
Jackson, Jerome
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438703, 438782, 438783, 257618, 257758, H01L 214763, H01L 2302, H01L 2329, H01L 2331
Patent
active
057233853
ABSTRACT:
A wafer edge seal ring structure is disclosed to provide reduced particulate contaminant generation during wafer processing of high density integrated circuits. The structure is formed by delimiting the deposition of layers at the peripheral edges of wafers. It is shown that as each layer is deposited and then essentially trimmed back from the edge of the wafer through a judicious use of mask and etching, and/or edge-bead rinsing (EBR) and later sealed by wafer edge exposure (WEE), the otherwise present abnormal growth of layers are prevented from building up into protrusions at the edge of wafer that later peel or break up to form particulate matter and fine dust. The method, which is also disclosed, teaches how each layer is recessed at appropriate distances from the wafer edge and how the whole ring structure is sealed against attacking particles.
REFERENCES:
patent: 5425846 (1995-06-01), Koze et al.
patent: 5426073 (1995-06-01), Imaoka et al.
patent: 5593925 (1997-01-01), Yamaha
Lin Hui-Tzu
Shen Chih-Heng
Ackerman Stephen B.
Guay John
Jackson Jerome
Saile George O.
Taiwan Semiconductor Manufacturing Company Ltd
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