Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1988-06-01
1991-06-18
Niebling, John F.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
118725, 118729, 156345, 16510434, 1983391, 1984781, 1988038, 20429815, 20429825, 269254R, 414217, 414222, 414225, C23C 1434, C23C 1456
Patent
active
050247476
ABSTRACT:
Semiconductor wafers having patterns of steps and grooves defining microcircuit elements thereon are coated with metallic film by supporting the wafers individually adjacent a respective ring-shaped sputtering source in stationary relationship thereto. To effectuate such individual wafer processing on a continuous basis and preserve the evacuated argon environment, a vacuum chamber sputter coating apparatus is provided which has a number of work stations therein, at least one of which includes said ring-shaped sputtering source. Also included is a load lock; and an intermittently rotating vertical plate-like wafer carrier means therewithin positioned closely adjacent the chamber entrance, and carrying wafers in turn from the load lock to the work stations. The carrier includes apertures each accepting a wafer therewithin in an upright position, with the wafers edgewise resiliently supported by clip means, without the use of any externally-originating supports such as platens. Both surfaces of the wafer can be accessed by processing equipment, for example, heating or cooling means at some of the work stations. Only a few wafers inside the chamber are at risk at any one time, and introduction of contaminants, debris, as well as disturbances to the chamber environment are minimized.
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Hutchinson Martin A.
Lamont, Jr. Lawrence T.
Shaw R. H.
Turner Frederick T.
Cole Stanley Z.
Leader William T.
Niebling John F.
Novack Sheri M.
Sgarbossa Peter J.
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