Wafer cleaning solution for cobalt electroless application

Details Wafer cleaning solution for cobalt electroless application Wafer cleaning solution for cobalt electroless application

2007-09-25

2007-09-25

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21174

Reexamination Certificate

active

11053501

ABSTRACT:
A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.

REFERENCES:
patent: 6572453 (2003-06-01), Wijekoon et al.
patent: 2001/0052351 (2001-12-01), Brown et al.
patent: 2005/0101130 (2005-05-01), Lopatin et al.

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